Design and layout of phase shifting photolithographic masks

ABSTRACT

A method for defining a full phase layout for defining a layer of material in an integrated circuit is described. The method can be used to define, arrange, and refine phase shifters to substantially define the layer using phase shifting. Through the process, computer readable definitions of an alternating aperture, dark field phase shift mask and of a complimentary mask are generated. Masks can be made from the definitions and then used to fabricate a layer of material in an integrated circuit. The separations between phase shifters, or cuts, are designed for easy mask manufacturability while also maximizing the amount of each feature defined by the phase shifting mask. Cost functions are used to describe the relative quality of phase assignments and to select higher quality phase assignments and reduce phase conflicts.

RELATED APPLICATIONS

This application is a divisional of U.S. Application No. 10/809,650filed 25 Mar. 2004, entitled “Design and Layout of Phase ShiftingPhotolithographic Masks,” having inventors Christophe Pierrat and MichelCôté and assigned to the assignee of the present invention, whichapplication is a divisional of U.S. Application No. 10/085,759, filed 28Feb. 2002, entitled “Design and Layout of Phase ShiftingPhotolithographic Masks,” having inventors Christophe Pierrat and MichelCôté and assigned to the assignee of the present invention, whichapplication is a continuation-in-part of, and incorporates by reference,U.S. Patent Application Ser. No. 09/669,359 filed 26 Sep. 2000 entitled“Phase Shift Masking for Complex Patterns” having inventor ChristophePierrat and assigned to the assignee of the present invention, which isa non-provisional of U.S. Provisional Patent Application Ser. No.60/215,938 filed 05 Jul. 2000 entitled “Phase Shift Masking For ComplexLayouts” having inventor Christophe Pierrat and assigned to the assigneeof the present invention.

This application is a divisional of U.S. Application No. 10/809,650filed 25 Mar. 2004, entitled “Design and Layout of Phase ShiftingPhotolithographic Masks,” having inventors Christophe Pierrat and MichelCôté and assigned to the assignee of the present invention, whichapplication is a divisional of U.S. Application No. 10/085,759, filed 28Feb. 2002, entitled “Design and Layout of Phase ShiftingPhotolithographic Masks,” having inventors Christophe Pierrat and MichelCôté and assigned to the assignee of the present invention, whichapplication is related to, claims the benefit of priority of, andincorporates by reference, the U.S. Provisional Patent Application Ser.No. 60/296,788 filed 08 Jun. 2001 entitled “Phase Conflict Resolutionfor Photolithographic Masks” having inventors Christophe Pierrat andMichel Côté and assigned to the assignee of the present invention.

This application is a divisional of U.S. Application No. 10/809,650filed 25 Mar. 2004, entitled “Design and Layout of Phase ShiftingPhotolithographic Masks,” having inventors Christophe Pierrat and MichelCôté and assigned to the assignee of the present invention, whichapplication is a divisional of U.S. Application No. 10/085,759, filed 28Feb. 2002, entitled “Design and Layout of Phase ShiftingPhotolithographic Masks,” having inventors Christophe Pierrat and MichelCôté and assigned to the assignee of the present invention, whichapplication is related to, claims the benefit of priority of, andincorporates by reference, the U.S. Provisional Patent Application Ser.No. 60/304,142 filed 10 Jul. 2001 entitled “Phase Conflict Resolutionfor Photolithographic Masks” having inventors Christophe Pierrat andMichel Côté and assigned to the assignee of the present invention.

This application is a divisional of U.S. Application No. 10/809,650filed 25 Mar. 2004, entitled “Design and Layout of Phase ShiftingPhotolithographic Masks,” having inventors Christophe Pierrat and MichelCôté and assigned to the assignee of the present invention, whichapplication is a divisional of U.S. Application No. 10/085,759, filed 28Feb. 2002, entitled “Design and Layout of Phase ShiftingPhotolithographic Masks,” having inventors Christophe Pierrat and MichelCôté and assigned to the assignee of the present invention, whichapplication is related to, claims the benefit of priority of, andincorporates by reference, the U.S. Provisional Patent Application Ser.No. 60/325,689 filed 28 Sep. 2001 entitled “Cost Functions And Gate CDReduction In Phase Shifting Photolithographic Masks” having inventorsChristophe Pierrat and Michel Côté and assigned to the assignee of thepresent invention.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to manufacturing small dimension featuresof objects, such as integrated circuits, using photolithographic masks.More particularly, the present invention relates to phase shift maskingof complex layouts for integrated circuits and similar objects.

2. Description of Related Art

Phase shift masking has been applied to create small dimension featuresin integrated circuits. Typically the features have been limited toselected elements of the design, which have a small, critical dimension.See, for example, U.S. Pat. No. 5,766,806.

Although manufacturing of small dimension features in integratedcircuits has resulted in improved speed and performance, it is desirableto apply phase shift masking more extensively in the manufacturing ofsuch devices. However, the extension of phase shift masking to morecomplex designs results in a large increase in the complexity of themask layout problem. For example, when laying out phase shift windows ondense designs, phase conflicts will occur. One type of phase conflict isa location in the layout at which two phase shift windows having thesame phase are laid out in proximity to a feature to be exposed by themasks, such as by overlapping of the phase shift windows intended forimplementation of adjacent lines in the exposure pattern. If the phaseshift windows have the same phase, then they do not result in theoptical interference necessary to create the desired feature. Thus, itis necessary to prevent inadvertent layout of phase shift windows inphase conflict near features to be formed in the layer defined by themask.

In the design of a single integrated circuit, millions of features maybe laid out. The burden on data processing resources for iterativeoperations over such large numbers of features can be huge, and in somecases makes the iterative operation impractical. The layout of phaseshift windows and the assignment phase shift values to such windows, forcircuits in which a significant amount of the layout is accomplished byphase shifting, is one such iterative operation which has beenimpractical using prior art techniques.

Because of these and other complexities, implementation of a phase shiftmasking technology for complex designs will require improvements in theapproach to the design of phase shift masks.

SUMMARY OF THE INVENTION

A method for defining a full phase layout for defining a layer ofmaterial in an integrated circuit (IC) is described. In a full phaselayout substantially all features of a layer of material, e.g. thepolysilicon layer, are defined using phase shifting. By definingfeatures using phase shifting, the majority of the layer can be composedof sub-wavelength features. For example if a λ=193 nm stepper is usedthen the a feature significantly less than λ in size is difficult tomanufacture on the final IC without using phase shifting. By providing asystematic approach to placing, shaping, and assigning phase to thephase shifters, the method can produce high quality layouts that can beproduced as photolithographic masks. Those masks can in turn be used inthe production of a layer of an IC.

For a given pattern, e.g. the polysilicon (or gate) layer of anintegrated circuit, the features can be identified. By growing a regionaround the features—except for end caps of features—a maximum shifterarea can be defined. The maximum shifter area corresponds to the spacewhere the shifters are desirably placed to define the features. Shiftershapes can then be placed against the edges of the feature. The shiftershapes are spaced apart from one another to leave open spaces wherecuts, or openings, between different shifters may be necessary. Thespacing requirement is related to the design rules for minimum spacingand edge length and may be different for different types of situations,e.g. outer and inner corner.

In some embodiments, the shifter shapes are a trapezoid stacked on topof a rectangle. This shape is designed to admit a cut that has a squarenotch at the top. Thus avoiding pointed corners which may be difficultto manufacture in a mask.

In some embodiments, the shifter shapes are then refined to fill certainopen areas within the maximum shifter area.

Next, phase dependencies between the different shifter shapes aredetermined along with costs. This is important because there are certainrequirements for an alternating aperture phase shifting mask, e.g.shifter on opposite sides of a feature should have opposite phase.However, there may be additional considerations beyond phase conflictsthat should be considered. For example, how desirable, or undesirable,is it to have two shifters be the same phase on an inside corner,outside corner, along three edges, etc. Other criterion may includemultiple-layer dependencies, e.g. positioning based on contacts,diffusion areas, etc. As well as cost functions for small shifters.Overall, the cost functions describe the relative quality of a givenarrangement, e.g. shifter shape A and shifter shape B given same phase.

Phase can then be assigned to the shifter shapes according to thedependencies and the cost functions. After that, same phase shifters canbe merged together filling some of the previously open cut spaces.Additional refinements are provided by some embodiments of the inventionincluding removal of small shifters, squaring of corners, and fillingopen spaces with the dominant or subordinate phase.

After the phase shifters are defined, the trim shapes can be definedusing the phase shifter shapes and the original pattern. In someembodiments, the logical or of the finished phase shifter shapes and theoriginal layout are combined, down-sized to account for maskmisalignment errors and then another logical or is performed with theoriginal layout. The trim layout may include attenuated phase shiftingshapes, e.g. tri-tone mask, etc.

In some embodiments, the input is a file containing the layout in aformat such as GDS-II stream format and the output may be one or morefiles. In one embodiment, the output is a single GDS-II stream formatfile containing both the trim and phase layers. In other embodiments,the output is two mask data files, one for each mask, suitable for useby mask fabrication machines.

Embodiments of the invention include photolithographic masks. Thephotolithographic masks include a phase mask and a complimentary mask.The phase mask comprises a dark field, alternating aperture phase maskwhere the phase windows have been arranged to define the target patternas described above. The complimentary mask comprises a mask designed toclear artifact left by the phase mask and define and remaining edges oredge segments not defined by the phase mask.

Embodiments of the invention include methods for manufacturingintegrated circuits. The method includes exposing a layer of material inan IC using masks prepared and defined as described above.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 illustrates exemplary inner corner cuts used to shape phase andtrim layers.

FIG. 2 illustrates exemplary outer corner cuts used to shape phase andtrim layers.

FIG. 3 illustrates the cut shape in greater detail.

FIG. 4 illustrates a shifter boundary after endcap identification.

FIG. 5 illustrates an endcap cutting protection area.

FIG. 6 illustrates an initial shifter shape.

FIG. 7 illustrates the minimum shifter separation for merging.

FIG. 8 illustrates the shifters of FIG. 7 after merging.

FIG. 9 illustrates notches to be filled between proximate shifters.

FIG. 10 illustrates how the shifter shape of FIG. 6 leaves open cuts onouter corners.

FIG. 11 illustrates an initial shifter placement on a contact landingarea.

FIG. 12 illustrates the layout of FIG. 11 after the shifter has beenextended to the boundary.

FIG. 13 illustrates the layout of FIG. 12 after the open spaces arefurther filled by the shifter.

FIG. 14 illustrates the measurements used in a cost function for astraight line phase conflict.

FIG. 15 illustrates the measurements used in a cost function for aninner corner.

FIG. 16 illustrates the measurements used in a cost function for anouter corner.

FIG. 17 illustrates the measurements used in a cost function for athree-edge case.

FIG. 18 illustrates the measurements used in a cost function for thesmall shifter area case.

FIG. 19 illustrates cost function sensitivity to features on otherlayers.

FIG. 20 is a process flow diagram for preparing a layout.

FIG. 21 illustrates an example layout after endcap identification.

FIG. 22 illustrates the layout of FIG. 21 after shifter boundaries aredefined.

FIG. 23 illustrates the field cuts for the layout of FIG. 22.

FIG. 24 illustrates the corner cut shapes for the layout FIG. 22.

FIG. 25 is a process flow diagram for designing a phase layer and a trimlayer to substantially define a pattern of a layout using phaseshifting.

FIG. 26 illustrates the layout of FIG. 21 after placement of shiftersaccording to the process of FIG. 25.

FIG. 27 illustrates the layout of FIG. 26 after some open spaces havebeen filled according to the process of FIG. 25.

FIG. 28 illustrates the layout of FIG. 27 after additional refinement ofthe shifter shapes according to the process of FIG. 25.

FIG. 29 illustrates the layout of FIG. 28 after initial phase assignmentas occurred according to the process of FIG. 25.

FIG. 30 illustrates a phase layer for the layout of FIG. 29 afterenlargement of shifters according to the process of FIG. 25.

FIG. 31 illustrates the refinement of phase shifters through floodfilling using the dominant phase.

FIG. 32 illustrates the refinement of phase shifters through floodfilling using the dominant phase.

FIG. 33 illustrates the refinement of phase shifters through floodfilling using the subordinate phase.

FIG. 34 illustrates the refinement of phase shifters through squaringoff and flood filling using the dominant phase.

FIG. 35 illustrates the phase layer for the layout of FIG. 30 afterrefinement of the shifters according the process of FIG. 25.

FIG. 36 illustrates the trim layer superimposed on the phase layer ofthe layout of FIG. 34.

FIG. 37 illustrates the completed phase shifting layout for the layoutof FIG. 34.

FIG. 38 illustrates the trim layer for use in conjunction with thelayout of FIG. 35.

DETAILED DESCRIPTION

Overview

Methods and apparatuses for defining phase, and corresponding trim,layouts for defining a layer of material in an integrated circuit aredescribed. Embodiments of the invention include mask data preparation(MDP) data created according to and by the methods and apparatusesdescribed herein. Other embodiments include masks, or reticles, andintegrated circuit products produced from the layouts defined by themethods and apparatuses described herein.

According to one embodiment of the invention an input layout, e.g. inGDS-II stream format, is received for a layer of material. Embodimentsof the invention, e.g. by the process of FIG. 25 described below,produce one or more output layouts to define substantially all portionsof the pattern of the layout using phase shifting. For example, theoutput layout may include a GDS-II stream file having one or more phaselayers and a trim layer. In some embodiments, the 0 and 180 degree phaseshifters are separated into different layers to assist in the maskmanufacturing process. This is in part a limitation of the currentGDS-II stream format, as the file format does not provide a standard wayof designating phase on polygons within a layer. For convenience ofillustration and discussion, the singular term phase layer as usedherein will refer to all of the relevant phase layers in a given outputfile format designed for use in creating the phase mask. Thus the outputis what is sometimes referred to as a “full phase” layout, ormask/reticle. Additionally, the output can include a correspondinglayout for the complementary mask, sometimes referred to as a “trimmask”, for use in conjunction with the full phase mask. As with thephase data, the trim data can be in the same file and/or a separatefile.

The invention will be described in greater detail as follows. A varietyof setup information including parameters, cutting shapes, shiftershapes, and the like will be considered first. Then the process used bysome embodiments of the invention will be discussed with reference to anexample layout.

Setup

The process whereby the phase layers and trim layers are defined is bestunderstood with respect to the setup of the problem and severalparameters used in working with the original layout. First, cut shapesand the arrangement of inner and outer corner cuts will be described.Then, the manner in which the boundary of the phase region is createdwill be considered. Next, the initial shifter shapes and sizes will bedescribed. Then the process of gradually growing shifter shapes will beconsidered. Finally, cost functions used to determine placement andshaping of phase shifters and cuts will be considered.

Cut Shapes and Inner and Outer Corners

Turning first to FIGS. 1-3, exemplary inner and out corner cuts for alayout are shown as well as a more detailed view of a cut shape used byone embodiment of the invention. Turning first to FIG. 1, inner cornercuts 100 are examined with respect to a phase layer 102 and a trim layer104 for an exemplary inner corner. In the phase layer 102, a feature 110is defined by a shifter 112 and a shifter 114 is shown (the feature 110is actually not a part of the phase layer 102 itself). Similarly, thetrim layer 104 includes a trim 118 to protect the areas defined by theshifters and define the corner. The boundary of the feature 110 isindicated by a dashed line in the trim layer 104. Of particular interestis the cut shape used, see discussion of FIG. 3, below for more detail.The cut shape comprises a substantially square shaped notch with astraight line neck at a 45 degree angle coming out of the corner of thenotch. The shape is designed to comply with design rules—and moreimportantly—facilitate mask manufacturability.

Similarly, FIG. 2 shows outer corner cuts 200 including a phase layer202 and a trim layer 204. In the phase layer 202, a feature 210 isdefined by a shifter 212 and a shifter 214 (the feature 210 is not apart of the phase layer 202 itself but is shown for clarity ofillustration). In the trim layer 204, a trim 218 to protect areasdefined by the shifters and define the corner is shown. Dashed lines areused to show the boundary of the feature 210 in the trim layer 204.Additionally, a dotted and dashed line shows an alternative corner shape222 that can be employed on the trim layer 204. The alternative corneris designed to be completely design rule clean. In comparison, theoriginal corner might create a design rule violation due to the closeproximity of the edges of the corner to the angled edges of the cut. Asin FIG. 2, the similar cut shape is used to provide a design rulecompliant—and more importantly—easy to manufacture mask for the layouts.

Turning to FIG. 3, an exemplary cut 300 is shown as a dotted outline.The cut 300 is shaped like the cuts used in FIG. 1 and FIG. 2 toseparate shifter pairs. The shape includes a substantially square notchat the top that is intersected at an offset on a 45 degree angle by astraight neck that ends in a squared off form. Note that an angle 306between the square notch and the neck. In one embodiment the angle is135 degrees. The sizes of the various edges of the cut 300 will beprocess and design rule dependent. For example, the edge length 302 willbe related to the minimum edge length for the process—accounting formask manufacturing requirements. In one embodiment the edge length 302is a multiple, r>0.0, of the minimum edge length. In this example,r=1.0. Similarly, the edge length 304 will be similarly dependent on theminimum edge length, e.g. a multiple r′>0.0 of the minimum edge length.In this example, r′={square root}{square root over (2)}/2. The width 308of the neck will be dependent on the minimum edge separation as well asthe lithographic properties of the process, e.g. by a multiple r″>0.0.More specifically, the width 308 must be sufficient to allow the trim toclear phase artifacts left between the alternate phase shifters adjacentto the cut.

Boundaries

Continuing to FIG. 4 the desired phase boundary is shown for a feature400 having an endcap 404. A boundary 402 is shown as a heavy dashedline. As seen, the boundary can be created by a grow operation on thefeature shape—except where the endcap 404 is present. It should be notedthat the height of the endcap 404 should be related to the minimum edgelength, e.g. 0.8X, 1.0X, 1.1X, and more generally rX, r>=0.0. In someembodiments, the endcap area is a straight line resulting in a flatboundary across the top edge of the feature 400. This reflects adifference in whether or not the phase shifters or the trim will be usedto define the end cap and how much the phase area on adjacent featureswill need to be reduced. More specifically, looking at a feature 410adjacent to the endcap 404 of the feature 400, with the shifters for thefeature 400 contained within the boundary 402, the need to reduce theboundary around the feature 410 will be less than if the shifters forthe feature 400 extended all the way to the top of the endcap 404. Thus,the handling of endcaps represents a layout design tradeoff. In oneembodiment, it is preferred to use the phase shifters to define the endcap and so the boundary is flat at the end caps.

In another embodiment, the endcap handling is determined on acase-by-case basis with reference to one or more rules describing howcertain endcap cases should be handled. For example a rule might specifythat if no feature is in close proximity to the endcap use a flatboundary. However, in situations where there is a close feature, e.g. aswith the feature 410 in FIG. 4, then the area around the endcap shouldbe defined using the trim layer. In still other embodiments, asimulation is performed on the area of the layout using bothpossibilities and the configuration resulting in better results isselected.

The boundary 402 should be set at the preferred shifter width forreproducing the feature 400. For example if the feature 400 has acritical dimension (CD) of X nm and the preferred shifter width is Y nmfor a critical dimension of X nm with a given lithographic process (e.g.a specific wavelength of light, coherency, resist characteristics, etc.)then the boundary can be placed Y nm from the edges of the feature 400.For example, for a 248 nm wavelength lithographic process a preferredshifter width may be 150 nm-300 nm. The preferred width can bedetermined from test pattern simulations and measurements under avariety of conditions.

Additional ways of handling the boundary vis-à-vis adjacent features andendcaps should be considered with reference to FIG. 5. Specifically,FIG. 5 shows a feature 500 and a feature 510 with boundary 502 andboundary 512, respectively. An endcap 504 on the feature 500 is shown.As can be seen the areas within the boundary 502 and the boundary 512overlap. Also shown is a portion of the minimum boundary 514 associatedwith the feature 510 (heavy dotted and dashed line). The minimumboundary 514 represents a minimum shifter width for use in defining thefeature 510. A cutting protection region 520 is shown (checkeredpattern) on either side of the endcap 504. This region includes aminimum separation away from the top edge of the boundary 502 (e.g. thevertical direction in FIG. 5). It is also sufficiently wide in the otherdirection (e.g. horizontal direction in FIG. 5) to admit cuts, e.g.width of boundary 502. However, any area that must be included inaccordance with the minimum boundary 514 is taken out of the cuttingprotection area as seen by the end of the cutting protection 520 at theminimum boundary 514 to ensure that there will be adequate shifter widthto define the feature 510. Thus, the cutting protection 520 ensures thatthere is adequate room to admit a straight line cut to the right (orleft) of the endcap 504 while also allowing the definition of thefeature 510 using phase shifting.

Shifter Sizes and Shapes

Turning to FIG. 6, the basic shifter shape will be considered.Specifically, a feature 600 is shown with an associated shifter 610placed adjacent to the feature. The shifter 610 has, at this point, notyet been assigned phase. At this point, shifter 610 is a rectangularshape with a trapezoid sitting on “top” of the rectangle. The edges ofthe trapezoidal portion are at 45 degrees to accommodate a cut. However,more generally any design rule compliant angle can be used. Anotheraspect of the shifter shape is it permits an adjacent cut to remain openeven when the shifter directly abuts the base of the cut (see discussionof FIG. 22). The direction from the base of the shifter 610 abutting thefeature 600 to the top of the shifter will be referred to as the(shifter) width as it is the relevant dimension for controlling thecritical dimension (CD) of the feature 600. Additionally, for smallershifters, the trapezoidal portion can be omitted provided the shiftermeets the minimum width requirements.

The shifter 610 has been positioned along the edge that abuts thefeature 600 so that a minimum distance d₁ has been maintained betweenthe ends of the shifter and the next corner or, in this case, edge. Theminimum distance d₁ should be of adequate size to admit a cut. In oneembodiment, this distance is different for an inner versus an outercorner general form of Equation 1.Inner Corner (1+{square root}{square root over (2)}/2)dimOuter Corner ({square root}{square root over (2)}/2)dim   (1)where dim is the minimum dimension permitted. More generally the form isa multiple r>0.0 of the minimum dimension.

Similarly, the shifter 610 is first placed with the rectangular portionat the minimum allowed shifter width, d₂. (This is the verticaldirection in FIG. 6 along the axis from the base of the shifter towardsthe base of the trapezoidal region.) This minimum shifter width isderived from design rule parameters, e.g. minimum dimension. From alithographic perspective, this may not be of a size sufficient to definethe feature (e.g. the feature 600) in conjunction with the othershifters (not shown in FIG. 6) and the trim layer (also not shown). Inone λ=248 nm process, d₂ is 0.06 μm.

Also, as seen in FIG. 6 it may be useful to maximize shifter length, d₃,as the starting length for the shifter 610, shown as the length alongthe top edge of the shifter 610 in FIG. 6. When the minimum width d₂ isused but d₃ is maximized, the trapezoidal portion of the shifter willgenerally predominate as seen in FIG. 6. Further, this shifter placementsets up the desired cutting positions. On an inner corner, only thesingle cut seen in FIG. 1 is available. On an outside corner, the shapeof the shifter 610 allows the cut to come from any angle, including theforty-five degree angle shown in FIG. 2. More specifically, turningbriefly to FIG. 10, where the outer corner of a feature 1000 is shownwith shifter 1002 and shifter 1004 the arrows show that the outer cornercut can be placed at any angle based on the shifter positioning. Notealso that the shifter 610 has been maximized in overall width to touchthe boundary (heavy dashed lines). In some situations it may not bepossible to expand the shifter to reach the boundary while maintaining atrapezoidal shape in which case the shifter shapes shown in FIGS. 11-13can be used as appropriate.

Turning to FIG. 7, a feature 720 and a feature 700 that are part of alayout are now visible in the figure along with a shifter 730 and ashifter 710, respectively. The shifter 710 and the shifter 730 are inclose proximity. Here, the separation between the respective shifters isless than the minimum separation, d₄. In some embodiments, d₄corresponds to a minimum separation design rule and/or one or morelithographic parameters relating to minimum separation. In someembodiments of the invention, shifters are merged as shown in FIG. 8with the shifter 710 and the shifter 730 merged into a shifter 810,shaped as shown. In some embodiments, notch filling may also need to beperformed as described in conjunction with FIG. 9, e.g. to remain designrule compliant.

FIG. 9 illustrates a similar configuration to that found in FIG. 7however here, the two original shifters, the shifter 920 and the shifter910 adjacent to the feature 720 and the feature 900, respectively, areabutting one another leaving notches, the notch 930 and the notch 932.Some embodiments of the invention merge the shifters and fill suchnotches, as shown by the dashed lines. The width of the filled notchcorresponds to the length over which the two shifters are less than, orequal to, d₄ apart in some embodiments.

Reshaping of Shifters

Turning to FIGS. 11-13, the reshaping of a shifter placed as describedin FIG. 6 during the processing of the layout according to embodimentsof the invention will be considered. FIG. 11 shows a feature 1100, acontact landing pad, and two of the cuts as dashed lines for the cut1104 and the cut 1106. (The other cuts are omitted for clarity ofillustration.) The outer edge of the cuts also show where the boundary,or preferred shifter width, would fall. (Emphasized by the heavy dashedline in FIG. 11 only.) As can be seen in FIG. 11 the shifter 1102 isplaced at the minimum width, and length, with enough room to accommodatethe cut 1104 and the cut 1106. However, if the sides of the trapezoidsare maintained at a forty-five degree angle then the shifter cannot fillthe entire shifter width to the boundary while maintaining the shapesshown in FIGS. 6-9.

During the processing of the layout, as will be described more fully inconnection with FIG. 25, the shifter can be increased in size to themaximum width, as seen in FIG. 12. Here, the shifter 1202 is shown. Inone embodiment, the reshaping of FIG. 12 is only performed if theboundary abuts the field of the layout. Further, as appropriate one orboth of the surrounding areas between the shifter and the cuts can beincorporated into the shifter. The circumstances where this would beappropriate will be described in greater detail in conjunction with FIG.25. FIG. 13 shows the expanded shifter as three separate shifters, theshifter 1302, the shifter 1304, and the shifter 1306. In the finaloutput layout these will have the same phase and can, if appropriate, bemerged into a single polygon representing the entire shifter. It shouldalso be noted that the combined shape of the three shifters is similarto the shape of the shifter in FIG. 6 rotated so that the trapezoidalportion is adjacent to the original feature.

Cost Functions

Turning to FIGS. 14-17 cost functions used by embodiments of theinvention will now be considered in greater detail. The cost functionscan be used to describe the relative “badness” (or “goodness” dependingon how the function is formulated) of accepting a particularconfiguration. For purposes of cost functions, a conflict is anarrangement of shifters on a phase layer of a layout that will cause a(desired) feature to either fully or partially fail to resolve. Inaddition to reducing conflicts, cost functions can be used to causeembodiments of the invention to prefer one configuration over anotherbased on the relative cost of two choices. The use of the cost functionsin designing the phase layer will be described in greater detail inconnection with FIG. 25.

FIG. 14 illustrates a conflict caused by overlapping same phaseshifters. Specifically, in FIG. 14 a feature 1400 is surrounded in partby a shifter 1402 and a shifter 1404, both the same phase. The twoshifters are separated by distance 1420, e.g. the width of the feature1400. The region the two shifters overlap in is the overlap 1410. Oneway to express the cost of allowing this phase conflict is a formula ofthe general form of Equation 2. $\begin{matrix}{r\frac{overlap}{\left( {{distance} - \dim} \right) + ɛ}} & (2)\end{matrix}$Where overlap is the measurement of the phase conflict length (e.g.overlap 1410), distance is how far apart the shifters are (e.g. distance1420), dim is the minimum feature width for the design, ε is the minimumgrid size, and r>0.0 is an implementation dependent ratio, according toone embodiment r=1.0 for a straight line shifter conflict. Thus, if theshifter 1402 and the shifter 1404 are the same phase and the length overwhich they overlap is large, the cost of permitting the conflict toremain in the layout is high.

The two-edge case has two basic forms: inner corner, FIG. 15, and outercorner, FIG. 16, and refers to an inner or outer corner. In the two-edgecase some embodiments of the invention prefer to avoid cutting the phaseregion. Thus, in such embodiments, the cost function is designed toassociate a greater cost with dividing the shifter 1502 and the shifter1504 (that partially define the feature 1500) as opposed to having asingle large (same-phase) shifter. The same goal is true with respect toFIG. 16 and the shifter 1602 and the shifter 1604 (that partially definethe feature 1600).

More specifically, equations of the general form of Equation 3 can beused: $\begin{matrix}{r\frac{1}{\min\left( {d_{01},d_{12}} \right)}} & (3)\end{matrix}$For either inner or outer corner computations where d₀₁ is the length ofone of the two edges and d₁₂ is the length of the other and r>0.0.Returning to FIG. 15, the distance 1520 and the distance 1530 wouldcorrespond to d₀₁ and d₁₂, respectively. Similarly, in FIG. 16, thedistance 1620 and the distance 1630 would correspond to d₀₁ and d₁₂,respectively. The ratio r used is implementation dependent. According toone embodiment, r=16.0 for outer corners and 6.0 for inner corners.

The three-edge case is illustrated by FIG. 17 and occurs when there arean inner and an outer corner in close proximity to one another, e.g. a“staircase” step. The feature 1700 has an edge with a distance 1720 thatis insufficient to admit placement of a shifter shape according to theparameters described above in connection with FIG. 6. The preference isto assign all three edges the same phase, e.g. have a single contiguousshifter. Cost equations of the general form of Equation 4 can be used:$\begin{matrix}{r\frac{1}{d_{12}}} & (4)\end{matrix}$where r>0.0 and d₁₂ corresponds to the length of the short edge, e.g.the distance 1720 in FIG. 17. The ratio r used is implementationdependent. According to one embodiment, r=5.0.

Additionally, some embodiments of the invention proscribe a costfunction for small shifter areas. Take for example the situation of FIG.18 where two small shifters, e.g. the shifter 1800 and the shifter 1810,are in close proximity. Such small shifters may be difficult tomanufacture in the mask and it may be desirable to encourage them to bejoined into a single, larger shifter. Such a cost function can be of thegeneral form of Equation 5: $\begin{matrix}{r\left( {\frac{1}{a1} + \frac{1}{a2}} \right)} & (5)\end{matrix}$where “a1” is the geometrical area of a first shifter within a givendistance, e.g. n nanometers, of the current shifter and “a2” is the areaof the current (small) shifter. For example, if the shifter 1800 is thecurrent shifter, its area would be given by a2 while the area of theshifter 1810 would be given by a1. In one embodiment, r=0.07. As noted,the cost for all shifters within a given distance can be computed and/orthe value of r can also be varied over distance, e.g. further awayshifters use a lower r value.

Further, although the cost functions are shown as relating to a singleratio, r, in fact multiple ratios can be used. For example, in oneembodiment, the value of r can be selected based on the other elementsof the equation, e.g. if distance>120 nm, r=8.0 for an outer corner, butif distance>240 nm, r=4.0, etc. This can be used if no particulardistance/area cutoffs are used when computing costs and/or to furthermodulate the relative costs based on the declining penalty for conflictsat greater distances. In other embodiments, the size of adjacent featureregions is relevant to the value of r. For example, if a cut will toucha relatively large region, e.g. a contact landing pad, it may be moredesirable to allow a cut in that location than if the cut touches asmaller region, e.g. the T intersection. For example, consider the cutlocation 1840 in FIG. 18 adjacent to a large polysilicon region versusthe cut location 1940 adjacent to a smaller polysilicon region. Thus insome embodiments, the value of r for large regions may be less than thevalue of r used for smaller adjacent regions because a phase conflictcan be more easily corrected with OPC in larger regions.

Other embodiments of the invention use information from multiple layersin defining and selecting appropriate cost functions. Turning briefly toFIG. 21 which shows a layout 2100, if a small rectangular area (e.g. theends of the feature 2110 or the end of the feature 2120) was determinedto be a contact landing pad, a different cost function could beselected. According to one embodiment of the invention, when contactlanding pads are detected, there is a preference as expressed by theformulation of the cost function to use the maximum number of cuts toimprove printing of the region. Other examples include avoiding cutsadjacent to the diffusion regions that define transistors, e.g. at aT-junction, etc. (see FIG. 19 where diffusion 1910 forms a gate withfeature 1900 and a cutting location 1940 is indicated). Some other ruletypes might include via layer-metal layer interaction detection toensure electrical connectivity as well as for localinterconnect-polysilicon interactions.

Ultimately, the cost functions may be used by embodiments of theinvention during the process of FIG. 25 and more particularly duringsteps 2540 and 2545, which will be described in greater detail below.

Branch and Bound

A brief discussion of branch and bound algorithms will be provided assome embodiments of the invention make use of the same for solving thephase assignment problem. There are a number of varieties of branch andbound algorithms that are well known. In one embodiment, the branch andbound algorithm in the abraCAD(TM) software from Cadabra DesignAutomation, a Numerical Technologies Company, San Jose, Calif., is used.

The phase assignment problem can be set up for branch and bound byviewing the problem as selecting a single path from 2^(n) possible pathsin a tree (representing the search space) where n is the number of phaseshifters in a given layout, or layout region, being processed for phaseassignment. Initial phase assignments can be provided for one or morephase shifters to start the process and provide initial costs. Thesolver searches the solution space while simultaneously bounding thesearch space, e.g. by eliminating paths that appear to result in highcosts. This allows the continued branching (search) of portions of thesolution space that result in lower costs.

The stopping point can be user selected: run until minimum reached,phase assignment cost below a threshold value, for a given period oftime and then select lowest cost found at that point, etc. Additionally,advantageously, branch and bound can generally be performed in parallelif sufficient computing resources are available.

Alternatively, graph based algorithms can be used to solve the phaseassignment problem as appropriate using weighted graph edges and graphcoloring algorithms.

Now, the process of defining the phase layers and complimentary trimlayer will be considered in greater detail.

Process Flow

Turning to FIG. 20, a process flow for preparing a layout is shown. Theprocess of FIG. 20 can be used in conjunction with the process of FIG.25 to design a phase layer and trim layer to substantially define apattern of a layout using phase shifting. The resultant layouts can beused to define phase shifting masks, and corresponding trim masks, thatcan in turn be used in lithographic processes to define integratedcircuits.

The process starts at step 2000 as the maximum shifter area isdetermined. This is simply the preferred shifter sizes, e.g. a givendistance n nm from the structures to be defined. As described inconjunction with FIG. 4-5, this can be computed after identification ofendcaps. For one sample k=248 nm process, the preferred shifter area is150-300 nm. The particular value of n can be determined from simulationsand/or test mask exposures and will be lithography process, design, andlayout dependent.

Turning to FIG. 21, a layout 2100 is shown including two features, afeature 2110 and a feature 2120. FIG. 21 shows the layout after theendcaps, endcap 2112 and endcap 2122, have been identified. Then, inFIG. 22, the layout 2200 is shown that includes the layout 2100 and aboundary 2230 defining the maximum, or preferred, shifter width to usein defining the features as a heavy dashed line.

Next, at step 2005, several intermediate values and/or shapes can becomputed for later use. In some embodiments, these values and/or shapesare computed only as needed. The following values and/or shapes arepre-computed according to one embodiment:

-   -   -   non-field=shifter shapes+original layout

    -   field=area within the boundary−non-field

These values and/or shapes can then be more easily used in subsequentsteps. Similarly, the locations of non-critical areas can be identified.For example, all minimum size regions such as wire bends (corner of L),intersections of wires (T), and other non-minimum width features can beidentified; all of which can be considered non-critical.

Next, at step 2010, the locations of cuts from the field are determined.This is easy understand with respect to FIG. 23 where the layout 2300 isshown including cuts from the boundary 2230 inward towards the field ina predefined cut shape (see FIG. 3) at each corner of the boundary 2230.As can be seen, some of the locations of the cuts would overlap thefeatures, e.g. near endcaps. Other cuts, e.g. the cut 2310, are notableas the cut only exists because of how the line ends are handled and thecut is not generated by step 2015. Other similar examples include thecut 2312 and the cut 2314. In contrast a number of the other cuts, e.g.the cut 2316, occur both at a corner of the boundary and a corner of afeature. Thus, the cut 2316 is also found at step 2015.

The process continues at step 2015, with the identification of cornercut shapes, e.g. from the corners features to the boundaries. This isshown in FIG. 24, including the layout 2400. In FIG. 24, the boundaryedge has been made thinner to emphasize that the cut locations aredetermined by the corners of the features. Again, as compared to FIG.23, several additional cut locations are found, e.g. the cut 2410.Again, as in step 2010, the cut shape is in accordance with the shapeseen in FIG. 3. The step 2010 and step 2015 can be done in parallel, outof order with respect to one another, and/or combined into a singlestep.

Additionally, in some embodiments, possible cuts are computed alongnon-critical portions of features, e.g. the back of the T in FIG. 19(not shown). In one embodiment, these cutting locations can be computedin conjunction with the determination of non-critical regions at step2005 of the process of FIG. 20. If that option is selected, then foreach edge, cuts of the minimum width centered about the middle of thenon-critical region can be computed for later use as an additional stepof FIG. 20 (not shown).

As noted the process of FIG. 20 is preparatory in nature. In someembodiments, the entire process is omitted with values computed duringthe process of FIG. 25 on an as needed basis. Upon completion of theprocess of FIG. 20, the process of FIG. 25 is then commenced. From aconceptual point of view, at the start of process FIG. 25, the layoutbeing operated on is the layout shown in FIG. 21 and all of the valuescomputed during the process of FIG. 20 are preserved, e.g. in extralayers of the layout, memory, etc.

The process of FIG. 25 starts at step 2520 with initial placement ofshifter shapes. For illustration purposes, several cutting locations areshown as dotted outlines. In one embodiment, the shifters are placedaccording to the basic shape shown in FIG. 6. The shifter shapes areplaced along each edge of the layout, e.g. the layout 2600 in FIG. 26.Turning first to the shifter 2610, it was placed abutting the edge ofthe adjacent feature. The shifter size is maximized while obeying thedistance to edge constraint d₁ (see FIG. 6). As can be seen if theshifter, e.g. the shifter 2610, cannot be extended to the preferredwidth, the extension approach shown in FIGS. 11-13 can be used.Additionally, if there are two cuts in region (e.g. left hand side ofshifter 2614) then the shifter will ensure that both remain open (thiseffect may be implicit in the value of d, for inner and outer corners.).

Also, note that FIG. 26 does not show merger of shifters, e.g. theshifter 2612 and the shifter 2614. Which can happen as part of step 2520and/or step 2525. Additionally, as noted, the shifter shapes aredesigned to admit a cut. This is shown in FIG. 26 by the shifter 2620,for example. Here, the shifter comes quite close to the adjacent shifteras shown in the region 2625 (shown as a dashed circle), but the anglesof the trapezoidal portion of the shifter 2620 admit the cut. Similarlyouter corners admit cuts as shown in FIG. 10 from all angles.

The process then continues at step 2525 with the filling open spaces andshifter mergers. Shifter merging and notch fill was described above withrespect to FIGS. 7-9 and that process can occur at this step (or itcould have been performed as part of step 2520). For example, theshifter 2612 and the shifter 2614 can be merged and notch filled at thisstep to form the shifter 2714 shown in the layout 2700 of FIG. 27.Additionally, open spaces such as corners near endcaps can be removed asseen in FIG. 27 where the formerly open space adjacent to the shifter2620 is now filled (e.g. filled open space 2725). More generally, theprocess can be best understood if the cuts are removed from view as seenin FIG. 27 and each open space is considered. Take for example the openspace 2730. As can be seen the open space touches three distinct phaseshifters. This makes that open space an unsuitable candidate for fillingat this step. The requirement is that the space touch only one shifteror only one non-critical shape.

Other open spaces adjacent to shifters have been filled in FIG. 27 aswell (reference numerals omitted). Additionally, although the filledopen spaces are shown as distinct triangular polygons in FIG. 27, theshifter shape can be formed as single or multiple polygons depending onthe formats supported by the layout description format (see, e.g., thesingle polygon used for the shifter 2620 and the filled open space 2725in FIG. 28).

At step 2530, the process continues with filling making use offorty-five degree cuts. This involves filling shifters, e.g. as seen inFIG. 12. However, it is undesirable to simply fill all corners. In oneembodiment, the test to determine whether or not the space is filled is:(i) will the filled area remain design rule compliant, (ii) will theexpanded shifter touch two non-critical areas (field or non-criticalfeatures). The relevant non-critical features can easily be computed atthis step. The non-critical features comprise those portions of theoriginal layout not abutting a shifter and field. The cleanup providedat step 2530 can be seen in layout 2800 of FIG. 28 where a number of theforty-five degree shifters have been filled, e.g. fill 2810, fill 2812,and fill 2814. But, note that region 2820, region 2822, and region 2824did not get filled. In the case of the region 2822 and the region 2824,a shifter merger would have occurred. In the case of the region 2820,the region abuts two cuts and so it is kept open. More specifically insome embodiments, the shifters are expanded if the area touches one cut,at most one shifter, the field, and at most two corners of the originallayout.

Next, at step 2535 the process loops on the above steps (2525-2530)until the process is complete and then continues at step 2540. Thestopping criteria can include whether or not changes were made to theshifter shapes during the previous pass through the loop, a fixed numberof iterations, other stopping criteria and/or combinations of the above,e.g. loop at most 5 times but stop as soon as no changes are made.

The specific breakdown and components of the steps 2520-2535 can bealtered; however, at the time step 2540 has begun the shifter shapesshould be established and to the extent practical at a maximal size(width, length, filled open spaces, etc.). That is because steps2540-2565 primarily assign phase rather than reshape and/or redefineshifters.

The process continues at step 2540 with the determinations of phasedependencies and computations of cost functions. As described above inconnections with FIGS. 14-19, cost functions describe the relativebadness (or goodness depending on the formulation) of permitting aparticular type of phase assignment to different shifters. As noted, thecost functions can be layer sensitive, have different formulations fordifferent distances of interaction, etc. Note, that to provide a usefulreduction in processing costs, the layout can be grouped into smallregions, or clusters, for processing throughout the process of FIG. 25.The benefits of clustering though are most apparent during step 2545,e.g. if branch and bound is used then the value of n will be smaller fora portion of a layout than for the entire layout. In one embodiment, acluster comprises a region of layout within a single boundary polygon,thus a single layout might have hundreds, or thousands, of clusters.

At step 2545, phase assignment is performed. According to oneembodiment, a branch and bound type algorithm is used, see above. In theprocess, the specific cuts that will actually be used are determined.For example if two shifters are separated by a cut, but are assigned thesame phase, they can eventually be merged. Turning to FIG. 29, thelayout of FIG. 28 is shown as the layout 2900 with initial phaseassignments.

Next, at step 2550, shifters can be enlarged and cuts filled. In oneembodiment, this is performed by growing the original layout towards theboundary and then computing the open spaces. If a given open regiontouches shifters of all one phase then that region can be filled withthat phase. Contrast, for example, the region 2910 (touching twodifferent phased shifters) with the region 2912 (touching two samephased shifters). If appropriate other algorithms can be used toidentify the open regions, or spaces, which can be filled according tothis step.

The results of step 2550 are shown in FIG. 30 where the layout 3000shows that the shifters have been enlarged to fill the cut spaces. Asnoted, the region 2910 is not filled by this step because the phase ofthe adjacent shifters are different.

The process continues at step 2560 with the removal of small shifters.This can be based on a predetermined sizing criteria. For some layoutsthis will result in open spaces that can be filled with the dominant, orsubordinate, phase when the process continues at steps 2570 and 2580,respectively. The example layout does not have any shifters to beremoved at step 2560 and so the layout is not modified by step 2560.

Next, at step 2570, further refinement of the shifters occurs. Thisincludes flood filling cuts with the dominant phase of the adjoiningareas. Turning briefly to the layout 3100 of FIG. 31, a shifter 3110 anda shifter 3120 define a feature 3160 similar to the feature 2120 seen inthe other layouts; however due to the absence of feature 2110 in thelayout 3100 there are shifters all around the large region of thefeature 3160 in FIG. 31. The layout 3100 has been processed according tothe process of FIG. 20 and the process of FIG. 25. After step 2550, theshifter shapes shown of the shifter 3120 and the shifter 3110 have beenestablished. At step 2560, the flood fill 3130 and will be convertedfrom open space to shifters. The decision to make the phase of shifter3110 the dominant phase in the cutting region of the cut 3150 can bebased upon a number of factors: the total area and phase of surroundingphase shifters, relative edge length of shifters abutting the openspace, etc. Here, the phase of the shifter 3110 was determined to bedominant, e.g. from edge length abutting the formerly open space.

As can be seen in FIG. 31, one effect of selecting the dominant phasecan be to determine the position of the resulting cut, e.g. the cut3150. In FIG. 31, the cut 3150 is vertically oriented and abuts theshifter 3120. If however the shifter 3120 had been found to have thedominant phase, then the resulting cut would have been horizontallyoriented and adjacent to the shifter 3110.

As part of step 2570, any minimum spacing or minimum edge lengthviolations created during the flood fill of step 2570 can be corrected(not shown in FIG. 31). Turning to FIG. 32 a portion of a simple layoutprocessed in a similar fashion to the layout of FIG. 31 is shown. InFIG. 32, a feature 3200 and a feature 3210 have the shifter 3220, theshifter 3230 and the shifter 3240 placed around the features to definethe features. At step 2570, the shifter 3250 and the shifter 3260 wereadded during the flood fill with the dominant phase. This leaves a sharpcorner that is not design rule compliant on the shifter 3250 where itabuts the cut. During step 2560, that corner can be removed as shown bythe shifter 3330 of FIG. 33. However, this removal in turn makes theopening larger than is absolutely necessary at the top, e.g. larger thanthe minimum separation between shifters.

During step 2580, the subordinate phase can be used to make the cutopening between the shifter 3330 and the shifter 3340 the minimumallowed separation throughout by filling open spaces using thesubordinate phase, thus adding a shifter 3350 as seen in FIG. 33. As instep 2570, spacing and edge length violations can be corrected after thefill.

Looking at FIGS. 31-33 it can be seen that the cut shapes, while designrule compliant, are relatively complex and may present slightdifficulties for mask manufacturing, inspection, etc. Accordingly, someembodiments of the invention include a step in the process of FIG. 25(not shown) to square off shifter shapes. This will result in straightercuts as seen in FIG. 34 where the layout of FIG. 32 has been squared(square off 3410 and square off 3420) and then step 2470 was appliedresulting in flood fill 3430 and flood fill 3440. Note also that step2580 will not result in any changes to the layout of FIG. 34 as therewill be no additional open space to fill. Note also that the resultingcut is easy to manufacture.

More specifically, the square off step can occur any time after phaseassignment and in one embodiment occurs between step 2560 and step 2570.In one embodiment the criterion for squaring off a shifter is that thesquare off section to be added back is neither (i) touching or adjacentwithin a predetermined separation to a shifter of a different phase nor(ii) overlaps with any other square off sections. Also the square offcan include two possible square off for shifters of the type shown inFIG. 12, e.g. shifter 1202. Specifically, one square off could make thetrapezoidal region rectangular while leaving the top unchanged. Also,the top portion could then be separately squared with the filled informerly trapezoidal section. This type of double square off can be seenin FIG. 35 just above the cut 3510 where the squared off portion isshown as a separate shifter shape for illustrative purposes.

The results of step 2560 and step 2570 for the layout of FIG. 30 areshown as layout 3500 in FIG. 35 (note that the square off proceduredescribed above was used.). Note the square off of the shifters aroundthe cut 3510, e.g. square off 3520, followed by the fill with thedominant phase, e.g. fill dominant 3530. The process then continues tostep 2580 where the flood fill is repeated; however, this time thesubordinate, rather than dominant phase is used in deciding whichregions to fill. In other respects, step 2580 is identical to step 2570.In the example layout shown, there is no additional filling to occur atstep 2580.

At this point, according to some embodiments of the invention,processing of the layout is complete.

The trim layout, or layer, can be derived from the phase layer. This isshown for the layout of FIG. 35 in FIG. 36 as shown by the trim 3610 inlayout 3600 (note the outline of the original features are shown with adotted outline and the phase layers shown in the background forreference). In one embodiment this can be a simple geometric computationbased on the shifter shapes+original layout shrunk by a slight shrink,e.g. 0.02 μ, with the original layout then added back in. The amount ofthe shrink can be determined based on the given process includingsufficient tolerances for mask misalignment, exposure conditions, etc.For example, by using different doses for the phase and trim layer, thesize of the openings in the trim layer can be smaller than mightotherwise be acceptable to clear phase artifacts. See, e.g. U.S. PatentApplication No. 09/972,428 entitled “Exposure Control For Phase ShiftingPhotolithographic Masks” having inventors Christophe Pierrat, et. al.,filed 5 Oct. 2001.

Turning to FIG. 37 the complete layout 3700 for the phase shifting maskis shown with the phase shifters as light transmissive regions (shifter3710, shifter 3720, and shifter 3730) and opaque protective material(e.g. chrome) elsewhere on the mask. For illustrative purposes theoutlines of the original features are shown as a dotted outline. Asnoted the shifter 3710 may be in one layer of the GDS-II output filecontaining the mask description while the shifter 3720 and the shifter3730 are in another (e.g. 0 in one layer, 180 in the other).Additionally, but not shown, the cuts could be continuous phase and/ormultiphase light transmissive regions, e.g. 0-180 gradually, 90 in cuts,60 and 120 in cuts, and/or some other combinations. FIG. 38 illustratesthe complete trim layout 3800 for the complementary trim mask showingthe trim 3610. Additionally, as was originally noted in conjunction withFIG. 2, it is possible to use a diagonal rather than notched opening onthe outer corner, shown as a dotted line for alternate corner 3810.

Also, some additional post processing may be required and/or desirableto for compliance of the layouts with design and mask manufacturingrules. For example, turning to the layouts of FIG. 37 and FIG. 38, thereis an extremely short edge in both the shifter and trim layers adjacentto the region of the cut 3510 (see FIG. 35). This edge may be removed byextending the width of the trim and shifter along the edge perpendicularto that short edge to eliminate the short edge, shown only on trim layerin FIG. 38 as a dashed line for post processed edge 3820.

Representative Alternative Embodiments

Additionally, although the description has primarily focused on examplesof defining a polysilicon, or “poly”, layer within an IC, phase shiftingcan be used to define other layers of material, e.g. interconnects,metal, etc.

In some embodiments, different shapes created by intermediate and finalprocessing steps are maintained in different layers of a single datafile. For example, if the GDS-II stream format is used, the originallayout could be maintained in a first layer, the zero degree shifters ina second layer, the 180-degree shifters in a third layer, and the trimlayer in a fourth layer. In other embodiments, multiple data files areused for separating relevant information. Additionally, as seen in thefigures, the results of intermediate processing steps can be output andviewed to better understand the shifter shaping and assignment processfor a given layout.

In some embodiments, the resultant layout comprises a layout where atleast one of:

-   -   eighty percent (80%) of non-memory portions in one layer of        material in the layout;    -   eighty percent (80%) of a part of the floorplan in one layer of        material;    -   eighty percent (80%) of cells in a given area;    -   ninety percent (90%) of a layer of material;    -   ninety five percent (95%) of a layer of material;    -   ninety nine percent (99%) of a layer of material;    -   one hundred percent (100%) of a layer of material;    -   one hundred percent (100%) of a in a functional unit of the chip        (e.g. ALU) in one layer of material;    -   one hundred percent (100%) of features in a layer of material        that are in the critical path of the design;    -   one hundred percent (100%) of features in a layer of material        above or below certain dimensions, e.g. all features with a        critical dimension 50 μm<CD<100 μm;    -   everything in a layer of material except those features that        cannot be phase shifted due to phase conflicts that cannot be        resolved;    -   everything in a layer of material except test structures; and    -   one hundred percent (100%) of all non-dummy features, e.g.        features providing structural support for processing purposes,        and non-electrically functional features in a layer of material        are defined using phase shifting. Further it should be        understood that even when a feature is substantially defined        using the phase shifting mask (e.g. the feature 3160 in layout        3100 of FIG. 31) portions of the feature at cut openings and        end-caps are defined by the complimentary mask. Therefore,        features such as the feature 3160 are considered to be defined        using the phase shifting (or using the “phase shifting mask”).

Embodiments of the invention can include manufactured masks and/or masksets fabricated according to the layouts defined according toembodiments of the invention. For example, the layouts of FIG. 37 andFIG. 38 could be processed by mask data preparation software such asCATS(TM) from Transcription Enterprises, Inc., a Numerical Technologiescompany, San Jose, Calif. to produce mask data files in formats suitablefor use by mask writing and fabrication machines. Embodiments of theinvention include finished integrated circuits including a layer ofmaterial defined by masks constructed from layouts defined according toembodiments of the invention.

Embodiments of the invention include a method of manufacturing a layerof material an integrated circuit. One wafer fabrication process used insuch embodiments comprises: applying a photoresist layer to the topsurface of a wafer; baking the photoresist layer; positioning the firstmask over the photoresist layer; exposing the photoresist layer throughthe first mask; positions the second mask over the photoresist layer;exposing the photoresist layer through the second mask; baking thewafer; developing the photoresist layer; chemical etching or ionimplantation; and removing the photoresist layer. Additional layers ofmaterial can be similarly defined. The first and second mask are thephase shifting mask and complimentary mask created from the layoutsdescribed above. For example the first mask could be a mask constructedfrom the layout 3700 of FIG. 37 and the second mask could be a maskconstructed from the layout 3800 of FIG. 38. The mask exposure order canbe reversed according to one embodiment of the invention, e.g.complimentary mask exposed then phase shifting mask.

Some embodiments of the invention include computer programs forperforming the processes of FIG. 17. In one embodiment, the process isimplemented using the abraCAD(TM) software produced by Cadabra DesignAutomation, a Numerical Technologies company, San Jose, Calif. In oneembodiment, the process is described using an AL language program insidethe abraCAD(TM) software. In some embodiments, the computer programs arestored in computer readable media, e.g. CD-ROM, DVD, etc. In otherembodiments, the computer programs are embodied in an electromagneticcarrier wave and/or computer data signal. For example, theelectromagnetic carrier wave and/or computer data signal may include theprograms being accessed over a network.

As used herein, the terms lithography and/or optical lithography referto processes that include the use of visible, ultraviolet, deepultraviolet, extreme ultraviolet, x-ray, e-beam, and/or other radiationsources for lithography purposes.

Conclusion

The foregoing description of embodiments of the invention has beenprovided for the purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formdisclosed. Many modifications and variations will be apparent. Theembodiments were chosen and described in order to best explain theprinciples of the invention and its practical application, therebyenabling others to understand the invention for various embodiments andwith various modifications as are suited to the particular usecontemplated. It is intended that the scope of the invention be definedby the following claims.

1. A photolithographic mask of a target pattern in a layer of material of an integrated circuit, the target pattern comprised of a plurality of features, the photolithographic mask comprising: a plurality of shifter shapes within a maximum shifter area around the plurality of features in the target pattern, such that the shifter shapes run along edges of the plurality of features, the plurality of shifter shapes having phases assigned according to phase dependencies and costs, the plurality of shifter shapes having one or more refinements filling at least part of space originally left between adjacent shifter shapes to admit a cut.
 2. The mask of claim 1, further comprising a complementary photolithographic mask from the target pattern and the plurality of shifter shapes.
 3. The mask of claim 1, wherein the phases are computed according to costs corresponding to a plurality of cost functions to describe the relative quality of accepting a particular phase assignment, the plurality of cost functions including one or more of an inner corner cost function, an outer corner cost function, a three edge cost function, a small shifter area cost function, a phase conflict cost function, and a multi-layer cost function.
 4. The mask of claim 1, wherein the phases are assigned via branch-and-bound.
 5. The mask of claim 1, wherein the maximum shifter area includes one or more end-caps of at least one feature of the plurality of features.
 6. The mask of claim 1, wherein the maximum shifter area accounts for endcap cutting protection.
 7. The mask of claim 1, wherein the maximum shifter area is defined by spatially padding the plurality of features with a distance and drawing a border around the plurality of features so that the border is spaced away from the plurality of features by the distance.
 8. The mask of claim 7, wherein the border of the maximum shifter area runs closer than the distance to features of the plurality of features having at least one endcap. 